Light emitting device and methods for forming the same
US8659045B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2007 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Aug 31, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
The present invention provides a light emitting device, which includes a transparent substrate, an epitaxial stack structure having a first portion and a second portion on the transparent substrate, a II/V group compound contact layer on the first portion of the epitaxial stack structure, a nitride-crystallized layer on the II/V group compound contact layer, a transparent conductive layer covering the nitride-crystallized layer, a first electrode on a portion of the transparent conductive layer, and a second electrode on the second portion of the epitaxial stack structure and structurally separated from the structure on the first portion of the epitaxial stack structure. The nitride-crystallized layer may help increase the external quantum efficiency of the light emitting device, thereby the light emitting efficiency of the light emitting device may also be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.