Power semiconductor circuit device and method for manufacturing the same
US8659147B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2009 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Apr 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor circuit device and a method for manufacturing the same, both of which are provided with: a base board on which at least a power semiconductor element is mounted; a resin which molds the base board and the power semiconductor element in a state where partial surfaces of the base board, including a base board surface opposite to a surface on which the power semiconductor element is mounted, are exposed; and a heat dissipating fin joined to the base board by a pressing force. A groove is formed in the base board at a portion to be joined to the heat dissipating fin, and the heat dissipating fin is joined by caulking to the groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.