Patent · US Active

Sequential-write, random-read memory

US8659973B2 · kind B2 · utility

0Cited by
12References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 18, 2010
Grant dateFeb 25, 2014
Priority date
Expiry dateFeb 4, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C8/18
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

In one embodiment, a method includes, in response to assertion of a write-enable signal at a memory array that comprises a plurality of words, sequentially and at a first clock frequency writing data to the memory array starting at a beginning of the memory array until the memory array is full. The method includes, independent of the writing of data to the memory array, asynchronously and at a second clock frequency that is slower than the first clock frequency reading data from the memory array based on read addresses received at the memory array.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.