Semiconductor laser element and method of manufacturing the same
US8660160B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2012 |
| Grant date | Feb 25, 2014 |
| Priority date | — |
| Expiry date | Oct 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser element includes a substrate of a first conduction type and a layered semiconductor structure formed on the substrate. The layered semiconductor structure includes a first semiconductor layer of the first conduction type formed on the substrate, an active layer formed on the first semiconductor layer, and a second semiconductor layer of a second conduction type formed on the active layer, the second conduction type being opposite to the first conduction type. The first semiconductor layer, the active layer, and the second semiconductor layer include a non-window region through which a light emitted from the active layer passes and a window region surrounding the non-window region. Band gap energy of the active layer is larger in the window region than in the non-window region. The second semiconductor layer includes a current confinement layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.