Method of manufacturing a flexible piezoelectric device

US8661634B2 · kind B2 · utility

Assignee

• KAIST (KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY) · KR

Inventors

• Keon Jae Lee · Savoy, US
• Suk-Joong L. Kang · Daejeon, KR
• Jaemyung Chang · Daejeon, KR
• Kwi-Il Park · Daejeon, KR
• Seungjun Kim · Daejeon, KR
• Sang Yong Lee · Cheongju-si, KR

Key dates

• Filing date: Mar 24, 2010
• Grant date: Mar 4, 2014
• Expiry date: Jun 13, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/42

Abstract

A method of manufacturing a flexible piezoelectric device including laminating a first metal layer on a silicon oxide layer on a silicon substrate. The method further includes laminating a device on the first metal layer and annealing the first metal layer to oxidize the first metal into a first metal oxide. The method further includes etching the first metal oxide to separate the device from the silicon oxide layer and transferring the separated device to a flexible substrate using a transfer layer. The metal oxide layer laminated on the silicon substrate is etched to separate the device from the substrate. As a result, physical damage of the silicon substrate is prevented and a cost of using expensive single-crystal silicon substrate is reduced.