System for improved pressure control in horizontal diffusion furnace scavenger system for controlling oxide growth
US8662886B2 · kind B2 · utility
0Cited by
12References
4Claims
0Family size
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Key dates
| Filing date | Nov 12, 2007 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Apr 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates generally to semiconductor wafer fabrication and more particularly but not exclusively to advanced process control methodologies for controlling oxide formation using pressure. The present invention, in one or more implementations, includes a pressure stabilization system to dynamically adjust scavenger pressure in a furnace during wafer fabrication in relation to a pressure formation range, value, or one or more pressure indicators in a wafer fabrication process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.