Method for manufacturing crystal oscillator
US8663487B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2009 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Sep 19, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The invention is directed to the provision of a method for manufacturing a crystal oscillator manufacturing method that can achieve a highly precise fine adjustment without applying unnecessary external force to a crystal oscillator, and that can adjust a plurality of crystal oscillators in a collective manner. More specifically, the invention provides a method for manufacturing a crystal oscillator includes a first etching step for forming a prescribed external shape, an electrode forming step for forming an electrode at least in a portion of a surface of the external shape, a leakage amount measuring step for measuring leakage amount associated with leakage vibration of the external shape, and a second etching step for etching the external shape by an amount that is determined based on a measurement result of the leakage amount measuring step so as to adjust balance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.