LED mesa sidewall isolation by ion implantation
US8664027B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2012 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Feb 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/034
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of LED manufacturing is disclosed. A coating is applied to a mesa. This coating may have different thicknesses on the sidewalls of the mesa compared to the top of the mesa. Ion implantation into the mesa will form implanted regions in the sidewalls in one embodiment. These implanted regions may be used for LED isolation or passivation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.