Method for forming pattern of metal oxide and method for manufacturing thin film transistor using the same
US8664037B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jun 20, 2012 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Aug 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a method for forming a metal oxide pattern and a method of manufacturing a thin film transistor using the patterned metal oxide. The method for forming a metal oxide pattern includes: preparing an ink composition including at least one metal oxide precursor or metal oxide nanoparticle, and a solvent; ejecting the ink composition on a substrate to form a pattern on the substrate; and photosintering the formed pattern. Herein, the metal oxide precursor is ionic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.