Method of fabricating a semiconductor device
US8664122B2 · kind B2 · utility
1Cited by
2References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2011 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Mar 26, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a method of fabricating a semiconductor device. In the present invention, after the formation of a photo-resist mask on a substrate, the photo-resist is subjected to a plasma pre-treatment, and then etch is conducted. With the plasma pre-treatment, a line width roughness of a linear pattern of the photo-resist can be improved, and thus much better linear patterns can be formed on the substrate during the subsequent etching steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.