Image sensor with reduced crosstalk having an isolation region with a second trench in the electrically conductive material of a first trench

US8664578B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Flavien Hirigoyen · Grenoble, FR
• Julien Michelot · Grenoble, FR

Key dates

• Filing date: Dec 21, 2011
• Grant date: Mar 4, 2014
• Expiry date: Aug 15, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

An image sensor having a semiconductor substrate, at least two photosites in the substrate and an isolation region between the photosites. The isolation region has a first trench covered by a thin electrically insulating liner and filled with an electrically conductive material, the conductive material has a second trench at least partially filled with an optically isolating material.