Memory device
US8664632B2 · kind B2 · utility
8Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2012 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Aug 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/84
Abstract
According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.