Hole-based ultra-deep photodiode in a CMOS image sensor and a process thereof
US8664734B2 · kind B2 · utility
4Cited by
3References
17Claims
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Key dates
| Filing date | Jan 11, 2011 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Nov 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A hole-based ultra-deep photodiode in a CMOS image sensor and an associated process are disclosed. A p-type substrate is grounded or connected to a negative power supply. An n-type epitaxial layer is grown on the p-type substrate, and is connected to a positive power supply. An ultra-deep p-type photodiode implant region is formed in the n-type epitaxial layer. Thermal steps are added to insure a smooth and deep doping profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.