Trenched substrate for crystal growth and wafer bonding
US8664747B2 · kind B2 · utility
4Cited by
57References
27Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 28, 2008 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Oct 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate for a light emitting diode (LED) can have one or more trenches formed therein so as to mitigate stress build up within the substrate due to mismatched thermal coefficients of expansion between the substrate and layers of material, e.g., semiconductor material, formed thereon. In this manner, the likelihood of damage to the substrate, such as cracking thereof, is substantially mitigated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.