Reconstituted wafer package with high voltage discrete active dice and integrated field plate for high temperature leakage current stability
US8664756B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2012 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Jul 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A reconstituted wafer level package for a versatile high-voltage capable component is disclosed. The reconstituted wafer package includes a dice substantially encapsulated by a mold material except for a first face. A dielectric layer is disposed on the first face of the dice. The package further includes an array of ball bumps formed on an exterior facing portion of the dielectric layer. Further, a field plate is disposed within the dielectric material and interposed between the first face of the dice and the ball bump array. The field plate may be spaced from the dice by a predetermined distance to prevent dielectric breakdown of the material of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.