Passivated micromechanical resonators and related methods
US8664836B1 · kind B1 · utility
1Cited by
24References
20Claims
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Key dates
| Filing date | Sep 17, 2010 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Dec 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2009/241
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Passivated micromechanical resonators and related methods are described. Applicants have appreciated that polycrystalline conductive layers used as electrodes for some MEMS resonators are a source of mechanical and electrical instability. To inhibit or prevent contamination of such conductive layers, which may exacerbate the instabilities, passivation structures are used. The passivation structures can be grown, deposited, or otherwise formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.