Silicon etching control method and system
US8666530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2010 |
| Grant date | Mar 4, 2014 |
| Priority date | — |
| Expiry date | Jan 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching control system controls exposure of a silicon workpiece to a spontaneous etchant. The system determines an amount of material to be removed from the silicon workpiece, based on metrology information corresponding to the silicon workpiece. An estimated etch time duration is determined for removing the amount of the material upon exposing the silicon workpiece to the spontaneous etchant for the estimated etch time duration. In some embodiments, the system monitors a change in mass of the silicon workpiece caused by exposure of the silicon workpiece to the spontaneous etchant to determine when the amount of the material has been removed from the silicon workpiece. Exposure of the silicon workpiece to the spontaneous etchant is stopped when the change in the mass of the silicon workpiece indicates that the amount of the material has been removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.