Method for manufacturing a polycrystalline dielectric layer
US8667654B2 · kind B2 · utility
499Cited by
6References
13Claims
0Family size
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Key dates
| Filing date | Dec 28, 2011 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Dec 28, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method manufactures a capacitor having polycrystalline dielectric layer between two metallic electrodes. The dielectric layer is formed by a polycrystalline growth of a dielectric metallic oxide on one of the metallic electrodes. At least one polycrystalline growth condition of the dielectric oxide is modified during the formation of the polycrystalline dielectric layer, which results in a variation of the polycrystalline properties of the dielectric oxide within the thickness of said layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.