Purifying method for metallic silicon and manufacturing method of silicon ingot
US8668895B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Jun 24, 2008 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Nov 25, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B33/037
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
In a purifying method for metal grade silicon, metal grade silicon with a silicon concentration not less than 98 wt % and not more than 99.9 wt % is prepared. The metal grade silicon contains aluminum not less than 1000 ppm and not more than 10000 ppm by weight. The metal grade silicon is heated at a temperature not less than 1500° C. and not more than 1600° C. in an inert atmosphere under pressure not less than 100 Pa and not more than 1000 Pa, and maintained at the temperature in the atmosphere for a predetermined period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.