Methods of manufacturing semiconductor devices
US8669152B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Sep 22, 2011 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Sep 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
In a method of manufacturing a semiconductor device, a mask is formed on a substrate. The substrate is divided into a first region and a second region. An upper portion of the substrate in the first region is partially removed using the mask as an etching mask to form a recess. A first gate structure is formed in the recess. A portion of the mask in the first region is removed. A blocking layer pattern is formed on the substrate in the first region over the first gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.