Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectronics
US8669164B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2010 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Jul 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures to enhance formation of a first portion of said three-dimensional microelectronic structure; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said first portion of a selected three-dimensional microelectronic structure is formed from said first precursor material; positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs; passing a second precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamb…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.