Method for reducing the concentration of oxygen, carbon, and silicon impurities on nitrogen-polar surfaces of gallium nitride
US8669168B1 · kind B1 · utility
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Key dates
| Filing date | Jan 9, 2013 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Jan 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of preparing GaN material includes subjecting a GaN substrate to at least two cycles of Ga deposition and desorption, then applying a layer of AlN to the GaN substrate, then growing GaN on the AlN layer by molecular beam epitaxy. This results in reduced concentrations of oxygen, carbon, and silicon impurities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.