Patent · US Active

Method for making a pattern from sidewall image transfer

US8669188B2 · kind B2 · utility

0Cited by

1References

11Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Sebastien Barnola · Meylan, FR
Jerome Belledent · Crolles, FR

Key dates

Filing date	Nov 21, 2011
Grant date	Mar 11, 2014
Priority date	—
Expiry date	Dec 12, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0337
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The substrate is provided with a layer of first material, a first etching mask, a covering layer and a second etching mask. The covering layer has a covered main area and an uncovered secondary area. The secondary area of the covering layer is partially etched via the second etching mask to form a salient pattern. Lateral spacers are formed around the salient pattern defining a third etching mask. The second etching mask is eliminated. The covering layer is etched by means of the third etching mask to form a salient pattern in the covering layer and to uncover the first etching mask and the first material. The layer of first material is etched to form the pattern made from the first material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.