High power amplifier
US8669812B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2011 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Feb 18, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49002
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high power amplifier architecture is disclosure. One example configuration includes a first plurality of distributed amplification stages operatively coupled in a first string. A conductive trace associated with the first string provides a stepped structure, such that the associated inductance successively decreases from input to output of the first string. A second plurality of distributed amplification stages is operatively coupled in a second string, and a conductive trace associated therewith provides a stepped structure, such that the associated inductance successively decreases from input to output of the second string. In one example case, each of the first and second strings comprises gallium nitride transistor amplification stages formed on silicon carbide. The module may further include a heat spreader material that thermally and electrically couples to the amplification stages. The conductive trace associated with one string can be shared with another string.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.