Photoelectric conversion device having an n-type buried layer, and camera
US8670059B2 · kind B2 · utility
4Cited by
32References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 20, 2010 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Mar 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.