Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with hard magnet biasing structure having a MgO insulating layer
US8670218B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2012 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Nov 28, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A hard magnet biasing structure for a CPP-GMR or CPP-TMR read head for a magnetic recording disk drive is located between the two sensor shields and abutting the side edges of the sensor free layer. The biasing structure includes a crystalline MgO insulating layer on the lower shield and the side edges of the free layer, a seed layer of either Ir or Ru on and in contact with the MgO layer, a layer of at least partially chemically-ordered ferromagnetic FePt alloy hard bias layer on the seed layer, and a capping layer on the FePt alloy hard bias layer. The MgO layer may be a single layer on and in contact with the side edges of the free layer, or an upper layer on and in contact with a base insulating layer selected from an aluminum oxide, a tantalum oxide, a titanium oxide, and a silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.