Adhesion layer for thin film transistors
US8673410B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Jul 28, 2005 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Sep 8, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/0272
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a poly- or microcrystalline silicon layer on an insulator comprises a silicon containing insulator, growing a thin adhesion promoting layer comprising amorphous silicon onto it and further growing a poly- or microcrystalline silicon layer onto the adhesion promoting layer. Such a sequence of layers, deposited with a PECVD method, shows good adhesion of the poly- or microcrystalline silicon on the base and is advantageous in the production of semiconductors, such as thin film transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.