Method for manufacturing light emitting diode chip
US8673667B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2013 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Apr 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of an LED chip includes the following steps: providing a substrate; forming a light emitting layer comprising an n-type semiconductor layer and a p-type semiconductor layer on the substrate; forming a pair of electrodes electrically connected the n-type semiconductor layer and the p-type semiconductor layer, respectively; connecting a bonding wire to one of the electrodes by adding melted metal to a portion of a top surface of the electrode, a ratio between an area of the portion of the top surface of the electrode and the top surface of the electrode being no less 6:10; and solidifying the melted metal to form a bonding pad to connect the bonding wire and the electrode together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.