Process of making a thin-film photovoltaic device and thin-film photovoltaic device

US8673678B2 · kind B2 · utility

Assignee

• SAINT-GOBAIN GLASS FRANCE · FR

Inventors

• Thomas Niesen · Karlsruhe, DE
• Volker Probst · Berlin, DE

Key dates

• Filing date: Dec 19, 2006
• Grant date: Mar 18, 2014
• Expiry date: Feb 16, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/541

Abstract

A thin-film photovoltaic device and a process of making such a device, the device comprising a first layer of a chalkopyrite semiconductor of a first doping type; a second layer of intrinsic zinc oxide deposited by chemical vapor deposition; a third layer of zinc oxide semiconductor of a second doping type opposite to the first doping type and deposited by a method other than chemical vapor deposition; and wherein the second layer is arranged between the first and third layers.