Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same
US8673697B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2011 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Aug 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
Abstract
A method of fabricating a thin film transistor, comprising steps of preparing a substrate; forming a polycrystalline silicon layer on the substrate; injecting impurities into the polycrystalline silicon layer for channel doping; patterning the polycrystalline silicon layer and forming a semiconductor layer; annealing the semiconductor layer in an H2O atmosphere, and forming a thermal oxide layer on the semiconductor layer; forming a silicon nitride layer on the thermal oxide layer; forming a gate electrode at a location corresponding to a predetermined region of the semiconductor layer; forming an interlayer insulating layer on the entire surface of the substrate; and forming source and drain electrodes electrically connected with the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.