Manufacturing method of charging capacity structure
US8673730B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2011 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Apr 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/03
Abstract
A method of manufacturing a charging capacity structure includes steps of: forming a first oxide layer, a support layer and a second oxide layer on a substrate in sequence; forming a plurality of etching holes on the surface of the second oxide layer in a matrix to run through the substrate that are spaced from each other at a selected distance; forming a plurality of pillar layers in the etching holes; removing the second oxide layer by etching; forming an etching protection layer on the surfaces of the support layer and pillar tubes that is formed at a thickness one half of the spaced distance between the etching holes such that the pillar tubes at diagonal locations form a self-calibration hole; and finally removing the first oxide layer from the self-calibration hole by etching. Through the self-calibration hole, the invention needn't to provide extra photoresists to form holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.