Image sensor with reduced optical crosstalk

US8674283B2 · kind B2 · utility

Assignees

• STMicroelectronics (Crolles 2) SAS · FR
• STMicroelectronics SA

Inventors

• Francois Roy · Seyssinet-Pariset, FR
• Flavien Hirigoyen · Grenoble, FR
• Julien Michelot · Grenoble, FR

Key dates

• Filing date: Dec 21, 2011
• Grant date: Mar 18, 2014
• Expiry date: Oct 10, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

A method of fabricating an image sensor includes the steps of: forming at least two photosites in a semiconductor substrate; forming a trench between the photosites; forming a thin liner on at least the sidewalls of the trench; depositing a conductive material having a first refractive index in the trench; and forming a region surrounded by the conductive material and having a second refractive index lower than the first index of refraction within the conductive material in the trench.