Gallium—nitride-on-diamond wafers and devices, and methods of manufacture
US8674405B1 · kind B1 · utility
13Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2012 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Sep 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.