Contacts-first self-aligned carbon nanotube transistor with gate-all-around
US8674412B2 · kind B2 · utility
14Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2012 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Aug 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of fabricating a semiconducting device is disclosed. A carbon nanotube is deposited on a substrate of the semiconducting device. A first contact on the substrate over the carbon nanotube. A second contact on the substrate over the carbon nanotube, wherein the second contact is separated from the first contact by a gap. A portion of the substrate in the gap between the first contact and the second contact is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.