Patent · US Active

MEMS element

US8679355B2 · kind B2 · utility

0Cited by

2References

13Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Hauke Pohlmann · Seevetal, DE
Ronald Dekker · Valkenswaard, NL
Joerg Mueller · Bonn, DE
Martin Duemling · Hamburg, DE

Key dates

Filing date	May 26, 2010
Grant date	Mar 25, 2014
Priority date	—
Expiry date	Jul 17, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T29/49156
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a substrate (32); providing a trench (40) in the material later (34); etching material from the trench (40) such as to also etch the substrate (32) from the first side of the substrate (32); grinding the substrate (32) from a second side of the substrate to expose the trench (40); and using the exposed trench (40) as an etch hole. The exposed trench (40) is used as an etch hole for releasing a portion of the material layer (34), for example a beam resonator (12), from the substrate (32). An input electrode (6), an output electrode (8), and a top electrode (10) are provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.