Synthesis of CsSnI3 by temperature gradient solid-phase sintering method
US8679445B1 · kind B1 · utility
2Cited by
1References
11Claims
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Key dates
| Filing date | Nov 14, 2013 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Nov 14, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B9/06
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
This invention discloses a solid-based synthesis of cesium tin tri-iodide (CsSnI3). More specifically, the CsSnI3 is fabricated in a 3 zone high temperature resisting tube by the solid-phase sintering method. CsSnI3 are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.