Voltage-gated metal-enhanced fluorescence, chemiluminescence or bioluminescence methods and systems
US8679855B2 · kind B2 · utility
12Cited by
18References
6Claims
0Family size
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Key dates
| Filing date | Mar 1, 2009 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Oct 24, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N33/54373
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In the present invention, it is demonstrated for the first time, the influence of electrical current on the ability of surface plasmons to amplify fluorescence signatures. An applied direct current across silver island films (SiFs) of low electrical resistance perturbs the fluorescence enhancement of close-proximity fluorophores. For a given applied current, surface plasmons in “just-continuous” low resistance films are sparsely available for fluorophore dipole coupling and hence the enhanced fluorescence is gated as a function of the applied current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.