Hybrid polysilicon heterojunction back contact cell

US8679889B2 · kind B2 · utility

Assignee

• SUNPOWER CORPORATION · US

Inventors

• Peter John Cousins · Menlo Park, US
• David D. Smith · Dublin, US
• Seung Bum Rim · Pleasanton, US

Key dates

• Filing date: Dec 21, 2011
• Grant date: Mar 25, 2014
• Expiry date: Sep 5, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.