Patent · US Active

Backgrind process for integrated circuit wafers

US8679945B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 5, 2012
Grant dateMar 25, 2014
Priority date
Expiry dateMar 5, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit is formed by coating a top surface of a wafer that has been processed through all integrated circuit chip manufacturing steps prior to backgrind with photoresist, applying backgrind tape over a top surface of the photoresist, backgrinding a back surface of the wafer to a specified thickness, removing the backgrind tape from the top surface of the photoresist, and removing the photoresist. The surface of the integrated circuit and any devices that may be bonded to the surface of the integrated circuit are protected by the photoresist layer during removal of the backgrind tape.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.