Silicon nanowire comprising high density metal nanoclusters and method of preparing the same
US8679949B2 · kind B2 · utility
2Cited by
2References
8Claims
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Key dates
| Filing date | Mar 31, 2011 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Apr 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/43
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon nanowire includes metal nanoclusters formed on a surface thereof at a high density. The metal nanoclusters improve electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.