Method of manufacturing semiconductor device including removal of deposits from process chamber and supply portion
US8679989B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2007 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Jun 3, 2028 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB08B7/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.