Patent · US Active

Mitigating the effects of defects in high temperature semiconductor wires

US8680015B2 · kind B2 · utility

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3References
7Claims
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Inventors

Key dates

Filing dateMar 8, 2012
Grant dateMar 25, 2014
Priority date
Expiry dateJul 20, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N60/80

Abstract

A method includes locating a defect in a first segment of high temperature superconducting wire. A second segment of high temperature superconducting wire is then positioned onto the first segment of high temperature superconducting wire such that the second segment of high temperature superconducting wire overlaps the defect. A path is then created such that current flows through the second segment of high temperature superconducting wire. The first segment of high temperature superconducting wire and second segment of high temperature superconducting wire are then laminated together.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.