Mitigating the effects of defects in high temperature semiconductor wires
US8680015B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Jul 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/80
Abstract
A method includes locating a defect in a first segment of high temperature superconducting wire. A second segment of high temperature superconducting wire is then positioned onto the first segment of high temperature superconducting wire such that the second segment of high temperature superconducting wire overlaps the defect. A path is then created such that current flows through the second segment of high temperature superconducting wire. The first segment of high temperature superconducting wire and second segment of high temperature superconducting wire are then laminated together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.