Organic semiconductors
US8680138B2 · kind B2 · utility
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Key dates
| Filing date | Nov 27, 2009 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | May 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A soluble oligomeric compound for forming an organic thin film transistor, has repeat units comprising two or more fused thiophene residues. The repeat units comprise the structure:The compound may include two or more terminating groups comprising solvating groups. A solution of the material can be used to form a thin film transistor by ink jet printing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.