Patent · US Active

Organic semiconductors

US8680138B2 · kind B2 · utility

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10Claims
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Assignee

Inventors

Key dates

Filing dateNov 27, 2009
Grant dateMar 25, 2014
Priority date
Expiry dateMay 3, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K10/466
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A soluble oligomeric compound for forming an organic thin film transistor, has repeat units comprising two or more fused thiophene residues. The repeat units comprise the structure:The compound may include two or more terminating groups comprising solvating groups. A solution of the material can be used to form a thin film transistor by ink jet printing.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.