Patent · US Active

Multiply-sampled CMOS sensor for X-ray diffraction measurements with corrections for non-ideal sensor behavior

US8680473B2 · kind B2 · utility

1Cited by
7References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 31, 2011
Grant dateMar 25, 2014
Priority date
Expiry dateAug 29, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N23/207
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Readout noise for each pixel in a CMOS Active Pixel Sensor is reduced by a five step process in which the pixel charge data from the sensor is non-destructively sampled at a plurality of times during a sensor frame time period and corrected for gain variation and nonlinearity. Then fixed pattern and dark current noise is estimated and subtracted from the corrected pixel charge data. Next, reset noise is estimated and subtracted from the pixel charge data. In step four, a model function of charge versus time is fit to the corrected pixel charge data samples. Finally, the fitted model function is evaluated at frame boundary times.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.