Multiply-sampled CMOS sensor for X-ray diffraction measurements with corrections for non-ideal sensor behavior
US8680473B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2011 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Aug 29, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N23/207
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Readout noise for each pixel in a CMOS Active Pixel Sensor is reduced by a five step process in which the pixel charge data from the sensor is non-destructively sampled at a plurality of times during a sensor frame time period and corrected for gain variation and nonlinearity. Then fixed pattern and dark current noise is estimated and subtracted from the corrected pixel charge data. Next, reset noise is estimated and subtracted from the pixel charge data. In step four, a model function of charge versus time is fit to the corrected pixel charge data samples. Finally, the fitted model function is evaluated at frame boundary times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.