Lithography method and device
US8680489B2 · kind B2 · utility
50Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Sep 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24521
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
An installation and method for etching at least one wafer coated with an etch-ready, blank photosensitive layer is disclosed. In accordance with an embodiment, the wafer has thickness irregularities, wherein the wafer is arranged to be able to be submitted to irradiation-beam scanning, a sheet transparent to the radiation to which the photosensitive layer is sensitive covers the wafer, and a probe beam intended to reflect on the upper portion of the sheet perpendicularly to the irradiation beam spot on the photosensitive layer is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.