Patent · US Active

Optoelectronic component and method for the production thereof

US8680563B2 · kind B2 · utility

3Cited by

1References

19Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Tilman Schlenker · Nittendorf, DE
Ralph Paetzold · Roth, DE

Key dates

Filing date	Apr 21, 2010
Grant date	Mar 25, 2014
Priority date	—
Expiry date	Apr 21, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

An optoelectronic component having a substrate (1), an anode (2) and a cathode (10) and at least one active layer (6) disposed between the anode and the cathode. An amorphous dielectric layer (3) which contains or consists of a metal oxide, a metal nitride or a metal oxynitride is disposed directly on the cathode-side surface of the anode. The metal contained in the metal oxide, metal nitride or metal oxynitride is selected from one or several of the metals of the group consisting of aluminum, gallium, titanium, zirconium, hafnium, tantalum, lanthanum and zinc.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.