Light emitting diode and flip-chip light emitting diode package
US8680565B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Dec 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
A light emitting diode (LED) is revealed. The LED includes a substrate, a first-type-doped layer, a light emitting layer, a second-type-doped layer, a plurality of first grooves, a second groove, an insulation layer, a first contact, and a second contact. The LED features that the second groove is connected to one end of each first groove and penetrates the second-type-doped layer and the light emitting layer to expose a part of the first-type-doped layer. The contact area between the first contact and the first-type-doped layer is increased. Therefore, the LED is worked at high current densities without heat accumulation. Moreover, the light emitting area is not reduced and the light emitting efficiency is not affected. The LED is flipped on a package substrate to form a flip-chip LED package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.