Semiconductor device, integrated circuit including the semiconductor device, control IC for switching power supply and the switching power supply
US8680622B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 4, 2009 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Sep 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device incorporates a resistor on a structure that uses diffusion layers for sustaining the breakdown voltage thereof to realizes a very resistive element that exhibits a high breakdown voltage and high electrical resistance, includes a spiral very resistive element buried in an interlayer insulator film. A first end of the very resistive element is connected to a drain electrode wiring and the second end of the very resistive element is grounded. An intermediate point of the very resistive element is connected to ae voltage comparator of a control IC. The semiconductor device according to the invention facilitates reducing the components parts costs, assembly costs and size of a switching power supply that includes a very resistive element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.