Magnetoresistive element and magnetic memory
US8680633B1 · kind B1 · utility
14Cited by
2References
18Claims
0Family size
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Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Mar 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element according to an embodiment includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, the first magnetic layer including a magnetic film of MnxGey (77 atm %≦x≦82 atm %, 18 atm %≦y≦23 atm %, x+y=100 atm %).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.