Photodetector with a bandwidth-tuned cell structure
US8680639B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 23, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | May 9, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A photodetector with a bandwidth-tuned cell structure is provided. The photodetector is fabricated from a semiconductor substrate that is heavily doped with a first dopant. A plurality of adjoining cavities is formed in the semiconductor substrate having shared cell walls. A semiconductor well is formed in each cavity, moderately doped with a second dopant opposite in polarity to the first dopant. A layer of oxide is grown overlying the semiconductor wells and an annealing process is performed. Then, metal pillars are formed that extend into each semiconductor well having a central axis aligned with an optical path. A first electrode is connected to the metal pillar of each cell, and a second electrode connected to the semiconductor substrate. The capacitance between the first and second electrodes decreases in response to forming an increased number of semiconductor wells with a reduced diameter, and forming metal pillars with a reduced diameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.